SPP3095_10 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP3095
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±20V
IDSS
RDS(on)
gfs
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=85℃
VGS=-10V,ID=-8A
VGS=-4.5V,ID=-6A
VDS=-10V,ID=-8A
VSD IS=-2.5A,VGS =0V
-30
V
-1.0
-3.0
±100 nA
-1
uA
-5
0.083
0.130
0.100
0.150
Ω
8
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID≡-8A
VDS=-15V,VGS=0V
f=1MHz
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
5.8
10
0.8
nC
1.5
226
87
pF
19
9
20
9
20
ns
18
35
6
20
2010/06/01 Ver.4
Page 3