SPP2341 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP2341
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
IDSS _{VDS=-20V,VGS=0V}
TJ=55℃
ID(on) VDS≦-5V,VGS=-4.5V
VGS=- 4.5V,ID=-3.3A
RDS(on) VGS=- 2.5V,ID=-2.8A
VGS=- 1.8V,ID=-2.3A
gfs VDS=-5.0V,ID=-3.3A
VSD IS=-1.6A,VGS=0V
-20
-0.35
V
-0.9
±100 nA
-1
uA
-10
-6
A
0.036 0.045 _Ω
0.045 0.055
0.055 0.065
3
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V,VGS=-4.5V
ID≡-3.3A
VDS=-6V,VGS=0V
f=1MHz
VDD=-6V,RL=6Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
8
13
1.2
nC
2.2
700
160
pF
120
15
25
35
55
ns
60
90
40
60
2007/06/25 Ver.2
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