SPP2305W Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP2305W
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±10V
IDSS
ID(on)
RDS(on)
VDS=-12V,VGS=0V
VDS=-12V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VDS≦-5V,VGS=-2.5V
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-3.0A
VGS=-1.8V,ID=-2.0A
gfs VDS=-5V,ID=-3.5A
VSD IS=-1.5A,VGS=0V
-15
-0.35
V
-0.85
±100 nA
-1
uA
-10
-4
A
-2
70
85
mΩ
105
8.5
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V,VGS=-4.5V
ID≡-2.8A
VDS=-6V,VGS=0V
f=1MHz
VDD=-6V,RL=6Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
4.8
8
1.0
nC
1.0
485
85
pF
40
10
16
13
23
ns
18
25
15
20
2011/07/14 Ver.2
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