SPP2301 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP2301
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
IDSS
ID(on)
RDS(on)
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VDS≦-5V,VGS=-2.5V
VGS=-4.5V,ID=-2.8A
VGS=-2.5V,ID=-2.0A
gfs VDS=-5V,ID=-2.8A
VSD IS=-1.6A,VGS=0V
-20
-0.45
V
-1.5
±100 nA
-1
uA
-10
-6
A
-3
0.095 0.12
0.150 0.17
Ω
6.5
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V,VGS=-4.5V
ID≡-2.8A
VDS=-6V,VGS=0V
f=1MHz
VDD=-6V,RL=6Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
5.8
10
0.85
nC
1.7
415
223
pF
87
13
25
36
60
ns
42
70
34
60
2007/02/02 Ver.3
Page 3