SPP1013_10 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP1013
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
IDSS _{VDS=-20V,VGS=0V}
TJ=55℃
ID(on) VDS≤ -4.5V,VGS =-5V
RDS(on)
gfs
VGS=-4.5V,ID=-0.45A
VGS=-2.5V,ID=-0.35A
VGS=-1.8V,ID=-0.25A
VDS=-10V,ID=-0.25A
VSD IS=-0.15A,VGS=0V
-20
-0.35
V
-0.8
±100 nA
-1
uA
-5
-0.7
A
0.42 0.52
0.58 0.70 Ω
0.75 0.95
0.4
S
-0.8 -1.2 V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-4.5V ,ID
≡-0.6A
VDD=-10V,RL=10Ω ,
ID≡-0.4A
VGEN=-4.5V ,RG=6Ω
1.5 2.0
0.3
nC
0.35
5
10
15
25
ns
8
15
1.4 1.8
2010/12/ 31 Ver.3
Page 3