SPN9971 Datasheet, PDF (3/10 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN9971
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=60V,VGS=0V
IDSS _{VDS=60V,VGS=0V}
TJ=85℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=16A
VGS=4.5V,ID=12A
gfs VDS=15V,ID=5.3A
VSD IS=2.0A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=5V
ID= 5.3A
VDS=30V,VGS=0V
f=1MHz
VDD=30V,RL=6.8Ω
ID≡4.4A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
60
V
0.8
2.0
±100 nA
1
uA
5
30
A
0.038 0.040
0.042 0.045
Ω
24
S
0.8 1.2 V
10
15
3.5
nC
3.6
890
85
pF
48
10
15
12
20
nS
25
35
10
15
2009/04/20 Ver.1
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