SPN9926A Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN9926A
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
IDSS
ID(on)
VDS=20V,VGS=0V
VDS=20V,VGS=0V
TJ=55℃
VDS≦5V,VGS=4.5V
RDS(on)
VGS=4.5V,ID=6.0A
VGS=2.5V,ID=5.0A
gfs VDS=5V,ID=-3.6A
VSD IS=1.7A,VGS=0V
20
V
0.6
±100 nA
1
uA
5
6
A
0.024 0.030
0.032 0.042
Ω
10
S
0.8 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V, VGS=4.5V,
ID=6.0A
VDS=8V,VGS=0V
f=1MHz
VDD=10V,RL=6Ω
ID≡1.0A,VGEN=4.5V
RG=6Ω
2
2.5
nC
2.1
575
84
pF
22
10
14
16
20
ns
35
40
3
10
2007/ 06 / 20 Ver.1
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