SPN7510_10 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN7510
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=100V,VGS=0V
IDSS _{VDS=80V,VGS=0V}
TJ = 150 °C
VGS= 10V,ID=30A
RDS(on)
VGS= 4.5V,ID=16A
gfs VDS=10V,ID=30A
VSD IS=30A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=80V,VGS=4.5V
ID= 30A
VDS=25VGS=0V
f=1MHz
VDD=50V,RL=1.6Ω
ID≡30A,VGEN=10V
RG=10Ω
Min. Typ Max. Unit
100
V
1.0
3.0
±100 nA
10
uA
100
16
mΩ
21
52
S
1.3 V
69
111
12
nC
39
5690 9100
540
pF
605
12
75
nS
220
250
2010/11/16 Ver.2
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