SPN7402_13 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN7402
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS _{VDS=20V,VGS=0V}
TJ=55℃
ID(on) VDS≦5V,VGS=4.5V
RDS(on)
gfs
VGS=4.5V,ID=4.0A
VGS=2.5V,ID=3.4A
VGS=1.8V,ID=2.8A
VDS=5V,ID=-3.6A
VSD IS=1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=6V,VGS=4.5V
ID≡2.8A
VDS=6V,VGS=0V
f=1MHz
VDD=6V,RL=6Ω
ID≡1.0A,VGEN=4.5V
RG=6Ω
Min. Typ Max. Unit
20
0.35
0.85 ^V
±100 nA
1
5
uA
6
A
0.060 0.065
0.067 0.080 Ω
0.076 0.095
10
S
0.8
1.2 V
4.8
8
1.0
nC
1.0
485
85
pF
40
8
14
12
18
ns
30
35
12
16
2013/06/18 Ver.2
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