SPN7002D_10 Datasheet, PDF (3/9 Pages) SYNC POWER Crop. – Dual N-Channel Enhancement Mode MOSFET

SPN7002D
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-drain Current
Source-drain Current (pulsed)
Forward Transconductance
Diode Forward Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=60V,VGS=0V
IDSS _{VDS=60V,VGS=0V}
TJ=125℃
VGS=10V,ID=0.50A
RDS(on) VGS= 5V,ID=0.30A
VGS= 4.5V,ID=0.05A
ISD
ISDM (2)
Gfs(1) VDS = 10 V, ID = 0.5 A
VSD(1) VGS = 0 V, IS = 0.12A
60
V
1.0 1.7 2.5
±100 nA
1
uA
10
3.5 5.0
4.0 5.5 Ω
3.7 5.5
0.35 A
1.4 A
0.6
S
0.85 1.5 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDD = 30 V, ID = 1 A,
VGS = 5 V
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
VDS = 25 V, f = 1 MHz,
Coss _{VGS = 0}
Crss
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = 30 V, ID = 0.5 A
RG = 4.7Ω VGS = 4.5 V
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
1.4 2.0
0.8
nC
0.5
43
20
pF
6
5
15
ns
7
8
2010/01/20 Ver.2
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