SPN6335 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – Dual N-Channel Enhancement Mode MOSFET

SPN6335
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID= 250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS= 20V,VGS=0V
IDSS _{VDS= 20V,VGS=0V}
TJ=55℃
ID(on) VDS≥ 4.5V,VGS =5V
VGS=4.5V,ID=0.95A
RDS(on) VGS=2.5V,ID=0.75A
VGS=1.8V,ID=0.65A
gfs VDS=10V,ID=1.2A
VSD IS=0.5A,VGS=0V
20
V
0.35
1.0
100 nA
1
uA
5
2
A
0.26 0.38
0.32 0.45 Ω
0.42 0.80
2.6
S
0.8 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V,
ID≡0.7A
VDS=10VGS=0V
f=1MHz
VDD=10V,RL=10Ω ,
ID≡1.0A
VGEN=4.5V ,RG=6Ω
1.2 1.5
0.2
nC
0.3
110
34
pF
16
5
10
8
15
ns
10
18
1.2 2.8
2007/01/ 02 Ver.2
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