SPN6098 Datasheet, PDF (3/7 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN6098
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=48V,VGS=0V
IDSS _{VDS=48V,VGS=0V}
TJ = 55 °C
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=15A
VGS= 4.5V,ID=10A
gfs VDS=5V,ID=15A
VSD IS=60A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=48V,VGS=4.5V
ID= 12A
VDS=15V,VGS=0V
f=1MHz
VDD=30V, ID=2A,
VGEN=10V, RG=3.3Ω
Min. Typ Max. Unit
60
V
1.0
2.5
±100 nA
1
uA
5
60
A
10
12
12
15
mΩ
47
S
1.2 V
24
6.9
nC
10
3200
210
pF
145
20
4
nS
84.5
6.5
2012 / 08 / 13 Ver.1
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