SPN09T10 Datasheet, PDF (3/10 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN09T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=80V,VGS=0V
IDSS _{VDS=80V,VGS=0V}
TJ=125℃
ID(on) VDS≥5V,VGS =10V
RDS(on) VGS= 10V,ID=10A
gfs VDS=10V,ID=5A
VSD IS=9A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=80V,VGS=10V
ID= 5A
VDS=25,VGS=0V
f=1MHz
VDD=50V,RL=10Ω
ID≡5A,VGEN=10V
RG=3.3Ω
Min. Typ Max. Unit
100
V
1
3
±100 nA
25
uA
250
9
A
0.110 0.160 Ω
5.6
S
1.3 V
10
16
2.5
nC
4.5
430
56
pF
35
6.5
10
nS
13
3.4
2012/07/03 Ver.5
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