SPP8803B Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP8803B
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP8803B is the Dual P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
‹ -20V/-7.0A,RDS(ON)= 22mΩ@VGS=-4.5V
‹ -20V/-6.0 A,RDS(ON)= 28mΩ@VGS=-2.5V
‹ -20V/-5.0 A,RDS(ON)= 40mΩ@VGS=-1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ TSSOP-8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(TSSOP – 8P)
PART MARKING
2011 / 09 /29 Ver.1
Page 1