SPP4435_11 Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP4435
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP4435 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ -30V/-9.2A,RDS(ON)= 25mΩ@VGS=- 10V
‹ -30V/-7.0A,RDS(ON)= 35mΩ@VGS=-4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2011/09/29 Ver.4
Page 1