SPP3481 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP3481
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP3481 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ -30V/-5.2A,RDS(ON)= 55mΩ@VGS=- 10V
‹ -30V/-4.2A,RDS(ON)= 75mΩ@VGS=-4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ TSOP-6P package design
PIN CONFIGURATION(TSOP-6P)
2007/03/19 Ver.1
PART MARKING
Page 1