SPP3467_13 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP3467
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP3467 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
-20V/-5.0A,RDS(ON)= 90mΩ@VGS=-4.5V
-20V/-3.5A,RDS(ON)=110mΩ@VGS=-2.5V
-20V/-1.7A,RDS(ON)=140mΩ@VGS=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP-6P package design
PIN CONFIGURATION(TSOP-6P)
PART MARKING
2009/06/15 Ver.2
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