SPP3413W Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP3413W
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP3413W is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
-20V/-3.4A,RDS(ON)= 95mΩ@VGS=-4.5V
-20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V
-20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOT-23)
PART MARKING
2012/04/18 Ver.2
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