SPP2323 Datasheet, PDF (1/7 Pages) SYNC POWER Crop. – Dual P-Channel Enhancement Mode MOSFET

SPP2323
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2323 is the Dual P-Channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage applications
notebook computer power management and other
battery powered circuits where high-side switching,
low in-line power loss, and resistance to transients are
needed.
FEATURES
 -20V/-3.3A,RDS(ON)=85mΩ@ VGS=-4.5V
-20V/-2.8A,RDS(ON)=120mΩ@VGS=-2.5V
-20V/-2.3A,RDS(ON)=170mΩ@VGS=-1.8V
 Super high density cell design for
extremely low RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 TDFN2X2-6L package design
APPLICATIONS
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
PIN CONFIGURATION( TDFN2X2-6L)
PART MARKING
2016/02/18 V1
Page 1