SPP2319W Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP2319W
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2319W is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
FEATURES
 -40V/-3.0A,RDS(ON)=100mΩ@VGS=- 10V
 -40V/-2.8A,RDS(ON)=130mΩ@VGS=-4.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 SOT-23 package design
PIN CONFIGURATION ( SOT-23 )
PART MARKING
2009/07/15 Ver.1
Page 1