SPP2311 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP2311
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2311 is the P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
 Drivers : Relays/Solenoids/Lamps/Hammers
 Power Supply Converter Circuits
 Load/Power Switching Cell Phones, Pagers
FEATURES
 P-Channel
-20V/0.45A,RDS(ON)= 0.65Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.90Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 1.5Ω@VGS=-1.8V
-20V/0.25A,RDS(ON)= 3.0Ω@VGS=-1.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 SOT-23 package design
PIN CONFIGURATION( SOT-23 )
PART MARKING
2013/10/18 Ver.1
Page 1