SPP2309 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP2309
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2309 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ P-Channel
-20V/2.5A,RDS(ON)= 0.35Ω@VGS=-4.5V
-20V/1.5A,RDS(ON)= 0.48Ω@VGS=-2.5V
-20V/0.7A,RDS(ON)= 0.75Ω@VGS=-1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2008/01/08 Ver.1
Page 1