SPN9926W Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN9926W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN9926W is the Dual N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
‹ 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V
‹ 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V
‹ 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2011/10/07 Ver.1
Page 1