SPN8902 Datasheet, PDF (1/7 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN8902
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8902 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN8910
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
High Frequency Small Power Switching for
MB/NB/VGA
Network DC/DC Power System
Load Switch
FEATURES
100V/2A, RDS(ON)= 330mΩ@VGS= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
SOT-223 package design
PIN CONFIGURATION
SOT-223
PART MARKING
2012/07/30 V.1
Page 1