SPN8882_11 Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN8882
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8882 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN8882 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
‹ 30V/40A,RDS(ON)= 10mΩ@VGS=10V
‹ 30V/40A,RDS(ON)= 14mΩ@VGS=4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ TO-252,TO-251 package design
PIN CONFIGURATION
TO-252
TO-251
PART MARKING
2011/04/19 Ver.4
Page 1