SPN8878 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN8878
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8878 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN8878 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
‹ 30V/20A,RDS(ON)= 12mΩ@VGS=10V
‹ 30V/15A,RDS(ON)= 17mΩ@VGS=4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ TO-252 package design
PIN CONFIGURATION
TO-252
PART MARKING
2009/04/20 Ver.1
Page 1