SPN8457 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN8457
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8457 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z DC/DC Converter
z LCD Display inverter
FEATURES
‹ 30V/5.5A,RDS(ON)= 58mΩ@VGS=10V
‹ 30V/4.0A,RDS(ON)= 98mΩ@VGS=4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-223 package design
PIN CONFIGURATION(SOT-223)
PART MARKING
2007/ 08 / 01 Ver.1
Page 1