SPN8206 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – Common-Drain Dual N-Channel Enhancement Mode MOSFET

SPN8206
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION
The SPN8206 is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application,
notebook computer power management and other battery
powered circuits where high-side switching.
FEATURES
 20V/5.0A,RDS(ON)= 8.2mΩ@VGS= 4.5V
 20V/3.0A,RDS(ON)= 11.0mΩ@VGS= 2.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 ESD capability 2KV
 TDFN -6P package design
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
PIN CONFIGURATION(TDFN– 6P)
PART MARKING
2013/10/21 Ver.1
Page 1