SPN8080 Datasheet, PDF (1/10 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN8080
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8080 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
‹ 80V/80A,RDS(ON)= 4.7mΩ@VGS= 10V
‹ 80V/37A,RDS(ON)= 8.7mΩ@VGS= 6V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ TO-220-3L package design
APPLICATIONS
z DC/DC Converter
z Load Switch
z SMPS Secondary Side Synchronous Rectifier
PIN CONFIGURATION( TO-220-3L )
PART MARKING
2008 / 11 / 25 Ver.1
Page 1