SPN6338 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – Dual N-Channel Enhancement Mode MOSFET

SPN6338
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6338 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
FEATURES
 N-Channel
30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V
30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V
30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 SOT-363 (SC-70-6L) package design
PIN CONFIGURATION( SOT-363 / SC-70-6L)
PART MARKING
2013/06/24 Ver. Preliminary
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