SPN4900 Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN4900
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4900 is the Dual N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
‹ 60V/5.3A,RDS(ON)= 118mΩ@VGS= 10V
‹ 60V/4.7A,RDS(ON)= 125mΩ@VGS= 4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2008/ 11/ 10 Ver.1
Page 1