SPN4392W Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN4392W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4392W is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
‹ 30V/13A,RDS(ON)= 8mΩ@VGS=10V
‹ 30V/10A,RDS(ON)= 12mΩ@VGS=4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z High-Side DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
2011/06/03 Ver.1
PART MARKING
Page 1