SPN3456_13 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN3456
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3456 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
FEATURES
 30V/6.0A,RDS(ON)= 40mΩ@VGS=10V
 30V/5.0A,RDS(ON)= 50mΩ@VGS=4.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 TSOP-6P package design
PIN CONFIGURATION( TSOP– 6P )
2013/08/12 Ver.2
PART MARKING
Page 1