SPN3414W Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN3414W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3414 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V
20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V
20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOT-23)
PART MARKING
2013/03/28 Ver.1
Page 1