SPN3402W Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN3402W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3402W is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
30V/2.8A,RDS(ON)= 58mΩ@VGS=10V
30V/2.3A,RDS(ON)= 65mΩ@VGS=4.5V
30V/1.5A,RDS(ON)= 105mΩ@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION ( SOT-23 )
PART MARKING
2012/11/08 Ver.1
Page 1