SPN3400W Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN3400W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3400W is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
FEATURES
 30V/5.4A,RDS(ON)= 38mΩ@VGS=10V
 30V/4.6A,RDS(ON)= 42mΩ@VGS=4.5V
 30V/3.8A,RDS(ON)= 55mΩ@VGS=2.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2012/01/31 Ver.2
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