SPN2346W Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN2346W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2346W is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
20V/6.0A,RDS(ON)= 35mΩ@VGS=4.5V
20V/5.0A,RDS(ON)= 40mΩ@VGS=2.5V
20V/4.0A,RDS(ON)= 100mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION(SOT-23)
2013/03/13 Ver.2
PART MARKING
S46WYW
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