SPN2322 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – Dual N-Channel Enhancement Mode MOSFET

SPN2322
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2322 is the Dual N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application
notebook computer power management and other
battery powered circuits where high-side switching,
low in-line power loss, and resistance to transients are
needed .
FEATURES
 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V
 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V
 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 TDFN2X2-6L package design
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
PIN CONFIGURATION(TDFN2X2 –6L)
PART MARKING
2015/05/28 Ver.1
Page 1