SPN2318W Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN2318W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2318W is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
FEATURES
 40V/3.9A,RDS(ON)= 56mΩ@VGS=10V
 40V/3.5A,RDS(ON)= 62mΩ@VGS=4.5V
 40V/2.0A,RDS(ON)= 95 mΩ@VGS= 2.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 SOT-23 package design
PIN CONFIGURATION ( SOT-23 )
PART MARKING
2009/07/15 Ver.1
Page 1