SPN230T06 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN230T06
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN230T06 is the N-Channel enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suitable for
synchronous rectifier application, Motor control power
management and other Power Tool circuits. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
 AC/DC Synchronous Rectifier
 Load Switch
 UPS
 Power Tool
 Motor Control
FEATURES
 60V/230A, RDS(ON)=2.5mΩ@VGS=10V
 High density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current
capability
 TO-220 and TO-263-2L package design
PIN CONFIGURATION
TO-220
TO-263-2L
2016/12/8 Ver 2
PART MARKING
Page 1