SPN2308 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN2308
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2308 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
‹ 20V/2.0A,RDS(ON)=380mΩ@VGS=4.5V
‹ 20V/1.5A,RDS(ON)=450mΩ@VGS=2.5V
‹ 20V/1.0A,RDS(ON)=800mΩ@VGS=1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2007/06/25 Ver.1
Page 1