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SPN2302A_08 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET | |||
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SPN2302A
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2302A is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
 20V/4.0A,RDS(ON)=75mâ¦@VGS=4.5V
 20V/3.4A,RDS(ON)=95mâ¦@VGS=2.5V
 20V/2.8A,RDS(ON)=135mâ¦@VGS=1.8V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 SOT-23-3L package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2008/07/20 Ver.2
Page 1
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