SPN1423_12 Datasheet, PDF (1/5 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN1423
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1423 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
20V/2.8A,RDS(ON)= 90mΩ@VGS=4.5V
20V/2.2A,RDS(ON)= 100mΩ@VGS=2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 ( SC–70 ) package design
PIN CONFIGURATION ( SOT-323 ; SC-70 )
PART MARKING
2012/06/20 Ver.2
Page 1