SPN1380 Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN1380
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1380 is the N-Channel enhancement mode
field effect transistors are produced using high cell
density DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to
300mA DC and can deliver pulsed currents up to
800mA. These products are particularly suited for low
voltage, low current applications such as small servo
motor control, power MOSFET gate drivers, and other
switching applications.
APPLICATIONS
 Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
 High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
 Battery Operated Systems
 Solid-State Relays
FEATURES
 50V/0.50A , RDS(ON)= 1.6Ω@VGS=10V
 50V/0.20A , RDS(ON)= 2.5Ω@VGS=4.5V
 50V/0.10A , RDS(ON)= 4.5Ω@VGS=2.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
2015/09/25 Ver. 1
Page 1