SPN125T06 Datasheet, PDF (1/12 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN125T06
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN125T06 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for synchronous
rectifier application, Motor control power management and
other Power Tool circuits. It has been optimized for low gate
charge, low RDS(ON) and fast switching speed.
APPLICATIONS
 AC/DC Synchronous Rectifier
 Load Switch
 UPS
 Motor Control
 Power Tool
FEATURES
 60V/20A,RDS(ON)=4.3mΩ@VGS=10V
60V/20A,RDS(ON)=5.6mΩ@VGS=4.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 TO-220/TO-220F/TO-251/TO-252/PPAK5x6
package design
PIN CONFIGURATION
T O-220 TO-220F TO-251
TO-252
PPAK5x6
PART MARKING
2017/1/11 Ver 3
Page 1