SPN1012_10 Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN1012
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1012 is the N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Drivers : Relays/Solenoids/Lamps/Hammers
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
FEATURES
‹ N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-523 (SC-89) package design
PIN CONFIGURATION( SOT-523 / SC-89 )
PART MARKING
2010/05/25 Ver.3
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