SPC6606 Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – N and P Pair Enhancement Mode MOSFET

SPC6606
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6606 is the N-Channel and P-Channel
enhancement mode power field effect transistors
w h i c h are produced using high cell density, DMOS
trench technology. This high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These devices
are particularly suited for low voltage applications such
as notebook computer power management and other
battery powered circuits where high-side switching,
low in-line power loss, and resistance to transients are
needed.
FEATURES
 N-Channel
12V/4.0A,RDS(ON)=26mΩ@ VGS=4.5V
12V/3.0A,RDS(ON)=35mΩ@ VGS=2.5V
12V/2.0A,RDS(ON)=50mΩ@ VGS=1.8V
 P-Channel
-12V/-3.3A,RDS(ON)=70mΩ@ VGS=-4.5V
-12V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V
-12V/-2.3A,RDS(ON)=110mΩ@VGS=-1.8V
 Super high density cell design for
extremely low RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 TDFN2X2-6L package design
APPLICATIONS
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
PIN CONFIGURATION( TDFN2X2-6L)
PART MARKING
2015/07/20 Ver.1
Page 1