SPC6605 Datasheet, PDF (1/10 Pages) SYNC POWER Crop. – N & P Pair Enhancement Mode MOSFET

SPC6605
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6605 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching, low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ N-Channel
20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V
20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V
‹ P-Channel
-20V/-2.4A,RDS(ON)= 128mΩ@VGS=-4.5V
-20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ TSOP– 6P package design
PIN CONFIGURATION( TSOP– 6P )
PART MARKING
2011/8/1 Preliminary
Page 1