SPC6604 Datasheet, PDF (1/11 Pages) SYNC POWER Crop. – N & P Pair Enhancement Mode MOSFET

SPC6604
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6604 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ N-Channel
20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V
20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V
20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V
20V/1.0A,RDS(ON)=120mΩ@VGS=1.25V
‹ P-Channel
-20V/-3.4A,RDS(ON)= 85mΩ@VGS=-4.5V
-20V/-2.4A,RDS(ON)=110mΩ@VGS=-2.5V
-20V/-1.7A,RDS(ON)=130mΩ@VGS=-1.8V
-20V/-1.0A,RDS(ON)=200mΩ@VGS=-1.25V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ TSOP– 6P package design
PIN CONFIGURATION( TSOP– 6P )
PART MARKING
2006/03/20 Ver.3
Page 1