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SPC6602 Datasheet, PDF (1/11 Pages) SYNC POWER Crop. – N & P Pair Enhancement Mode MOSFET | |||
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SPC6602
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6602 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
 N-Channel
30V/2.8A,RDS(ON)= 60mâ¦@VGS=10V
30V/2.3A,RDS(ON)= 80mâ¦@VGS=4.5V
 P-Channel
-30V/-2.8A,RDS(ON)=105mâ¦@VGS=- 10V
-30V/-2.5A,RDS(ON)=135mâ¦@VGS=-4.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 TSOPâ 6P package design
PIN CONFIGURATION( TSOPâ 6P )
PART MARKING
2006/03/20 Ver.3
Page 1
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